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| IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ = 2.6 V C C TO-247 AD G G E E G C E C (TAB) IXEH 25N120 IXEH 25N120D1 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25C TC = 90C Conditions TVJ = 25C to 150C Maximum Ratings 1200 V Features 20 36 24 -o 60 VCES 10 200 2.6 3.2 3.2 6.5 0.2 0.2 200 205 105 320 175 4.1 1.5 1.2 100 VCE = 900V; VGE = 15 V; RG = 68 ; TVJ = 125C non-repetitive TC = 25C e 4.5 VGE = 15 V; RG = 68 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H s h a u V A A A s W V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.63 K/W Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 20 A VGE = 15 V; RG = 68 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 20 A p IC = 25 A; VGE = 15 V; TVJ = 25C TVJ = 125C t * NPT3 IGBT - positive temperature coefficient of saturation voltage for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits * optional HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current * TO-247 package - industry standard outline - epoxy meets UL 94V-0 Applications * AC drives * DC drives and choppers * Uninteruptible power supplies (UPS) * switched-mode and resonant-mode power supplies * inductive heating, cookers (c) 2005 IXYS All rights reserved 1-4 0549 IXEH 25N120 IXEH 25N120D1 Diode [D1 version only] Equivalent Circuits for Simulation Maximum Ratings 31 19 A A Conduction Symbol IF25 IF90 Conditions TC = 25C TC = 90C Symbol VF IRM t rr RthJC Component Symbol TVJ Tstg Md Symbol RthCH Weight Conditions IF = 25 A; TVJ = 25C TVJ = 125C IF = 15 A; diF/dt = -400 A/s; TVJ = 125C VR = 600 V; VGE = 0 V Characteristic Values min. typ. max. 2.7 2.1 16 130 3.2 V V A ns 1.6 K/W IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.09 V; R0 = 85 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 32 m Thermal Response Conditions Maximum Ratings -55...+150 -55...+150 u C C Nm K/W g -o 0.25 6 mounting torque Conditions with heatsink compound 0.8...1.2 Characteristic Values min. typ. max. h a TO-247 AD Outline s e t IGBT (typ.) Cth1 = 0.004 J/K; Rth1 = 0.335 K/W Cth2 = 0.133 J/K; Rth2 = 0.295 K/W Free Wheeling Diode (typ.) Cth1 = 0.004 J/K; Rth1 = 1.076 K/W Cth2 = 0.078 J/K; Rth2 = 0.524 K/W Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC p (c) 2005 IXYS All rights reserved 2-4 0549 IXEH 25N120 IXEH 25N120D1 80 VGE = 17 V A IC 60 TVJ = 25C 15 V 60 A 50 IC 40 TVJ = 125C VGE = 17 V 15 V 13 V 13 V 40 11 V 30 20 11 V 20 9V 9V 10 0 0 0 1 2 3 4 VCE 5 V6 0 1 2 3 4 VCE 5 V 6 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics VCE = 20 V A IC 60 TVJ = 25C 40 TVJ = 125C -o 20 10 0 u IF 30 TVJ = 125C TVJ = 25C 40 A 20 s 0 0 5 10 VGE e t 0 1 2 VF 80 50 15 V 20 3 V 4 Fig. 3 Typ. transfer characteristics a Fig. 4 Typ. forward characteristics of free wheeling diode h 15 V 40 A IRM 200 ns 12 VGE p VCE = 600 V IC = 20 A 30 trr 150 trr 9 20 6 3 0 0 20 40 60 80 nC 100 QG TVJ = 125C VR = 600 V IF = 15 A IRM FII30-12E 100 10 50 0 0 200 400 600 -di/dt 0 800 A/s 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 0549 (c) 2005 IXYS All rights reserved 3-4 IXEH 25N120 IXEH 25N120D1 20 mJ td(on) tr V CE = 600 V V GE = 15 V R G = 68 TVJ = 125C 250 ns 200 t 150 100 50 Eon 0 4.0 3.5 mJ E off 3.0 V CE = 600 V V GE = 15 V R G = 68 T VJ = 125C 400 td(off) ns 350 300 250 200 150 100 E off tf 0 10 20 IC 30 A 50 0 40 t 16 E on 12 8 4 0 0 2.5 2.0 1.5 1.0 0.5 0.0 10 20 IC 30 A 40 Fig. 7 Typ. turn on energy and switching times versus collector current 10 mJ Eon Fig. 8 Typ. turn off energy and switching times versus collector current 2.5 mJ E off 2.0 V CE = 600 V V GE = 15 V IC = 20 A TVJ = 125C 1250 t Eoff ns 1000 td(off) t 750 500 250 tf 0 8 6 4 2 0 0 50 100 150 RG V CE = 600 V V GE = 15 V IC = 20 A T VJ = 125C 1.5 1.0 0.5 0.0 200 250 e -o 0 50 100 150 RG u 10 1 0.1 1 10 200 250 Fig. 9 Typ. turn on energy vs gate resistor s K/W Z thJC A ICM p 60 h 80 a Fig.10 Typ. turn off energy and switching times versus gate resistor diode 40 R G = 68 TVJ = 125C IGBT 20 single pulse 0 0 200 400 600 800 1000 1200 VCE V IXEH 25N120 100 1000 t ms 10000 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2005 IXYS All rights reserved 4-4 0549 |
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